Learning objectives
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Purposes: the phenomenology determined by the electrical and optical properties of semiconductors and the correlation structure-properties are highlighted through the laboratory experiments which also use the collaboration of experts of the laboratory IMEM-CNR of Parma where part of the experiences will be realized. <br />
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Skills acquired: at the end of the experimental course, during which the main diagnostic techniques will be discussed, the student should have acquired sufficient skills in the following actions: <br />
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a) good sensitivity in the application of fundamental physical principles of solid modeling and experimental approach suitable for studying the most important properties of a semiconductors <br />
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b) sufficient knowledge of basic investigative methods and key process technologies <br />
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c) a first introduction to the basic structures and related physical and technological problems to be solved for the realization of a device. <br />
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d) a first introduction to low-dimensional systems (and related nanostructures and nanotechnology). <br />
Prerequisites
<p>A fair knowledge of the fundamentals of quantum statistics (BE and FD statistic distributions) and quantum mechanuichs with a sufficient confidence in managing the Schrodinger equation are higly appreciated. </p>
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Course unit content
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1. PERIODIC STRUCTURES. ELECTRONIC STATES IN CRYSTALLINE SOLIDS. ELECTRON AND HOLE DYNAMICS. (4 LECTURES) <br />
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2. DIAMOND-LIKE STRUCTURE SEMICONDUCTORS. SEMICONDUCTOR IMPURITY STATES, STATISTICS OF CHARGE CARRIERS (4 LECTURES) <br />
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3. TRANSPORT AND MAGNETOTRANSPORT PROPERTIES. (6 LECTURES) <br />
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4. OPTICAL PROCESSES IN SEMICONDUCTORS (6 LECTURES) <br />
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5. NON EQUILICRIUM CHARGE CARRIERS (4 LECTURES) <br />
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6. NON HOMOGENEOUS SEMICONDUCTOR STRUCTURESS. MS BARRIER, MOS CAPACITOR, P-N JUNCTION (6 LECTURES) <br />
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7. HETEROSTRUCTURES. NANOSTRUCTURES AND BAND GAP ENGINEERING (2 LECTURES) <br />
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8. CRYSTAL DEFECTS (6 LECTURES) <br />
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9 OUTLINES OF VLSI AND NANO TECHNOLOFGIES: ETCHING, DIFFUSION, IMPLANTATION, LITOGRAPHY (10 LECTURES) <br />
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Full programme
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Bibliography
<p>Notes from the lectures of the course "Physics of Materials and Laboratory" <br />
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Notes from the lectures of the course "Materials: structure, properties, applications" </p>
<p><u>SUGGESTED TEXTBOOKS</u>:<br />
o M.Wolf, N. Holonyak, G.E. Stillman ““Physical <br />
properties of semiconductors” Prentice Hall <br />
International Editions <br />
o J. I. Pankove “Optica processes in semiconductors” <br />
Dover publ.inc. <br />
o M.S. Tyagi “Semiconductor materials and devices” John <br />
Wiley & sons <br />
o S.Sze “Introduction to Semiconductor devices: Physcs <br />
and technology” John Wiley & sons <br />
o R S..Muller, T.I. Kamins “Device electronics for <br />
integrated circuits“ <br />
John Wiley & sons <br />
o P. Bhattacharya “Semiconductor optoelectronic devices” <br />
Prentice Hall International Editions <br />
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Teaching methods
Final evaluation: written and oral report on a topic assigned by the teacher at the end of the laboratory module integrated by an interview on the theory.
Assessment methods and criteria
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Other information
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